Measurements of small-signal photo-EMF of Si and Ge MIS structures using scanning light probe
- 16 March 1978
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 46 (1) , 59-68
- https://doi.org/10.1002/pssa.2210460106
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Semiconductor profiling using an optical probeSolid-State Electronics, 1975
- Frequency dependence of photo-EMF of strongly inverted Ge and Si MIS structures—II experimentsSolid-State Electronics, 1975
- Frequency dependence of the photo-EMF of strongly inverted Ge and Si MIS structures—I. TheorySolid-State Electronics, 1975
- Investigations of mis structure inhomogeneities using a scanning mercury probePhysica Status Solidi (a), 1973
- Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurementsSurface Science, 1971
- Barrier Inhomogeneities on a Si–SiO2 Interface by Scanning Internal PhotoemissionApplied Physics Letters, 1971
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967