Frequency dependence of the photo-EMF of strongly inverted Ge and Si MIS structures—I. Theory
- 31 August 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (7-8) , 617-626
- https://doi.org/10.1016/0038-1101(75)90132-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Measurements on MIS structures at infrasonic frequenciesPhysica Status Solidi (a), 1970
- Temperature Dependence of Inversion-Layer Frequency Response in SiliconBell System Technical Journal, 1967
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965
- High-Frequency Relaxation Processes in the Field-Effect ExperimentPhysical Review B, 1957