Measurements on MIS structures at infrasonic frequencies
- 16 July 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 2 (3) , 627-634
- https://doi.org/10.1002/pssa.19700020324
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Temperature Dependence of Inversion-Layer Frequency Response in SiliconBell System Technical Journal, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962