Modeling intermodulation distortion in GaAs MESFETs using pulsed I-V characteristics
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 179-182
- https://doi.org/10.1109/gaas.1991.172666
Abstract
A technique has been developed for modeling intermodulation distortion of GaAs MESFETs using pulsed I-V drain characteristics. The technique involves measuring the drain I-V characteristic using short drain and gate pulses from a DC operating point. This pulsed I-V characteristic is used to model the nonlinearity of the drain current source. In addition, S-parameters measured about the DC bias point are used to model the gate capacitance nonlinearity. These nonlinearities are combined into a single model, and the harmonic balance method is used to simulate intermodulation performance. This technique has been used to simulate the third-order intermodulation distortion of a spike-doped MESFET and to investigate sensitivities of source and load impedance and device nonlinearities on intermodulation performance.<>Keywords
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