Electron-phonon interaction in tetrahedrally bonded solids
- 20 August 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (23) , 3355-3363
- https://doi.org/10.1088/0022-3719/14/23/013
Abstract
A localised scheme is introduced to study the interaction between phonons and valence electrons in tetrahedrally bonded solid. The authors obtain a simple Hamiltonian depending on just one parameter which is self-consistently computed for Si, Ge and GaAs. Nonpolar optical coupling constants and deformation potentials are calculated for those semiconductors and compared with experimental data from nonlinear transport and Raman scattering respectively.Keywords
This publication has 9 references indexed in Scilit:
- Surface superconductivity and the MOS systemPhysical Review B, 1981
- Absolute Cross‐Section for Raman Scattering by Phonons in SiliconPhysica Status Solidi (b), 1980
- Self-consistent calculation of the structural properties of siliconPhysical Review B, 1979
- Absolute cross section of first-order Raman scattering in GaAsPhysical Review B, 1979
- Bulk hot-electron properties of cubic semiconductorsAdvances in Physics, 1979
- Ab initioself-consistent calculation of silicon electronic structure by means of Wannier functionsPhysical Review B, 1979
- Self-consistent localised description of the electronic structure of semiconductorsJournal of Physics C: Solid State Physics, 1979
- Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Doped-type Si. II. Optical ModesPhysical Review B, 1973
- Effect of Carrier Concentration on the Raman Frequencies of Si and GePhysical Review B, 1972