Noise characterization of transistors in a 1.2 /spl mu/m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)
- 1 December 1994
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (6) , 2310-2316
- https://doi.org/10.1109/23.340581
Abstract
The analog performance of the Thomson HSOI3-HD technology has been measured up to a total dose of 12 Mrad(Si) of ionizing radiation (/sup 60/Co). The threshold voltage shift is -170 mV for p-channel and -20 mV for n-channel transistors. Transconductance degradation is respectively 4% and 17%. Noise has been measured in the 500 Hz-25 MHz bandwidth. In addition to the 1/f and white noise, a generation-recombination contribution appears in the noise spectrum. This contribution is sensitive to the bias applied to the backgate and body electrodes. The white noise increase after irradiation is 16% for p-channel and 35% for n-channel transistors. P-channel transistors have very low 1/f noise and are less sensitive to irradiation effects.<>Keywords
This publication has 15 references indexed in Scilit:
- Noise measurements on radiation-hardened CMOS transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SEU in SOI SRAMs-a static modelIEEE Transactions on Nuclear Science, 1994
- Measurements of a radiation hardened process: Harris AVLSIRANuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversionIEEE Transactions on Nuclear Science, 1992
- Low-Noise Wide-Band Amplifiers in Bipolar and CMOS TechnologiesPublished by Springer Nature ,1991
- CMOS/SOI hardening at 100 Mrad (SiO/sub 2/)IEEE Transactions on Nuclear Science, 1990
- A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETsSolid-State Electronics, 1987
- Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator filmsApplied Physics Letters, 1987
- Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistorsApplied Physics Letters, 1986
- Theory and experiments of low-frequency generation-recombination noise in MOS transistorsIEEE Transactions on Electron Devices, 1969