SEU in SOI SRAMs-a static model
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (3) , 607-612
- https://doi.org/10.1109/23.299807
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Effect of Temperature-Dependent Bipolar Gain Distribution on Seu Vulnerability of Soi Cmos SramsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Comparison of the Sensitivity to Heavy Ions of Sram in Different Simox TechnologiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Heavy ion sensitivity of a SRAM in SOI bulk-like technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The influence of emitter efficiency on single transistor latch in silicon-on-insulator MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Rate prediction for single event effects-a critiqueIEEE Transactions on Nuclear Science, 1992
- Applicability of LET to single events in microelectronic structuresIEEE Transactions on Nuclear Science, 1992
- Single-event charge enhancement in SOI devicesIEEE Electron Device Letters, 1990
- Model for CMOS/SOI single-event vulnerabilityIEEE Transactions on Nuclear Science, 1989
- Analytic Expressions for the Critical Charge in CMOS Static RAM CellsIEEE Transactions on Nuclear Science, 1983
- Collection of Charge on Junction Nodes from Ion TracksIEEE Transactions on Nuclear Science, 1982