Effect of Temperature-Dependent Bipolar Gain Distribution on Seu Vulnerability of Soi Cmos Srams
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 1078621X,p. 96-97
- https://doi.org/10.1109/soi.1992.664812
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Single-event charge enhancement in SOI devicesIEEE Electron Device Letters, 1990
- SEU characterization of hardened CMOS SRAMs using statistical analysis of feedback delay in memory cellsIEEE Transactions on Nuclear Science, 1989