Single-event charge enhancement in SOI devices
- 1 February 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (2) , 98-99
- https://doi.org/10.1109/55.46941
Abstract
Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.Keywords
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