An SOI voltage-controlled bipolar-MOS device
- 1 April 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (4) , 845-849
- https://doi.org/10.1109/t-ed.1987.23005
Abstract
This paper describes a new operation mode of the SOI MOSFET. Connecting the floating substrate to the gate in a short-channel SOI MOSFET allows lateral bipolar current to be added to the MOS channel current and thereby enhances the current drive capability of the device. Part of the bipolar current emitted by the source terminal merges into the channel before reaching the drain, which renders the base width substantially shorter than the gate length. This novel operating mode of a short-channel SOI transistor is particularly attractive for high-speed operation, since the device is capable of both reduced voltage swing operation and high current drive, n-p-n and p-n-p devices, as well as complementary inverters have been successfully fabricated.Keywords
This publication has 8 references indexed in Scilit:
- Half-micrometre-base lateral bipolar transistors made in thin silicon-on-insulator filmsElectronics Letters, 1986
- High-speed, low-power, implanted-buried-oxide CMOS circuitsIEEE Electron Device Letters, 1986
- Fabrication of thin silicon-on-insulator flims using laser recrystallisationElectronics Letters, 1985
- VB-5 floating substrate effects on the switching characteristics of SOI MOSFETIEEE Transactions on Electron Devices, 1985
- A new device interconnect scheme for sub-micron VLSIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Fully isolated lateral bipolar—MOS transistors fabricated in zone-melting-recrystallized Si films on SiO2IEEE Electron Device Letters, 1983
- Floating substrate effects in SOS VLSIsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- The effect of a floating substrate on the operation of silicon-on-sapphire transistorsIEEE Transactions on Electron Devices, 1978