A simple model for excitons bound to axial isoelectronic defects in silicon

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Abstract
The axial nature of isoelectronic defects in Si is modelled by a uniaxial stress acting on the crystal's valence band and conduction band extrema. The model provides an approximate description of the energy spacings and relative luminescence intensities of the lowest-energy bound exciton transitions. Experimental data on the effects of uniaxial stresses and magnetic fields can be fitted using three parameters for each, the value of the parameters being predictable to well within a factor of two from the properties of perfect Si.