On the Mechanism of Electron-Impact-Excited Luminescence in AC Thin Film Devices: ZnSe:Mn)
- 16 February 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 81 (2) , 733-738
- https://doi.org/10.1002/pssa.2210810238
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- On the inherent inferiority of ZnSe:Mn in impact excited luminescence devicesJournal of Applied Physics, 1983
- On the Mechanism of Electron Impact Excited Luminescence DevicesPhysica Status Solidi (a), 1983
- Mechanism of thin-film electroluminescenceIEEE Transactions on Electron Devices, 1983
- ZnSe:Mn in AC thin film electroluminescence devicesPhysica Status Solidi (a), 1983
- The efficiency of electron impact excited luminescence in ZnS thin film devicesPhysica Status Solidi (a), 1983
- Physical Concepts of High-Field, Thin-Film Electroluminescence DevicesPhysica Status Solidi (a), 1982