Diffusion of arsenic in epitaxial CdxHg1−xTe
- 1 February 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 100 (1-2) , 275-278
- https://doi.org/10.1016/0022-0248(90)90632-u
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Arsenic diffusion effects in CdxHg1-xTe layers grown by metal-organic vapour phase epitaxyMaterials Letters, 1989
- Long and middle wavelength infrared photodiodes fabricated with Hg1−x CdxTe grown by molecular-beam epitaxyJournal of Applied Physics, 1989
- Group V acceptor doping of CdxHg1−xTe layers grown by metal-organic vapour phase epitaxyMaterials Letters, 1988
- Defects, diffusion and activation in ion implanted HgCdTeJournal of Crystal Growth, 1988
- Measurement of impurities in a multi-doped sample of cadmium mercury tellurideJournal of Electronic Materials, 1983
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965