Group V acceptor doping of CdxHg1−xTe layers grown by metal-organic vapour phase epitaxy
- 30 June 1988
- journal article
- Published by Elsevier in Materials Letters
- Vol. 6 (10) , 365-368
- https://doi.org/10.1016/0167-577x(88)90125-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Ion implanted junction formation in Hg1−xCdxTeJournal of Vacuum Science & Technology A, 1987
- Arsenic-doped p-CdTe layers grown by organometallic vapor phase epitaxyApplied Physics Letters, 1987
- Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutionsJournal of Electronic Materials, 1987
- Computer controlled deposition of cmt heterostructures by MovpeJournal of Crystal Growth, 1986
- Electrical properties and annealing behaviour of CdxHg1−xTe grown by LPE and MOVPEJournal of Crystal Growth, 1986
- Indium doping of HgCdTe layers during growth by molecular beam epitaxyApplied Physics Letters, 1986
- Acceptor doping of bridgman-grown CdxHg1−xTeJournal of Crystal Growth, 1985
- The behavior of doped Hg1−xCdxTe epitaxial layers grown from Hg-rich meltsJournal of Crystal Growth, 1984
- The behaviour of selected impurities in CdxHg1−xTeJournal of Crystal Growth, 1982