Silicon Lattice Constraints on Structure of Interface States
- 1 January 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 23 (6) , 1558-1562
- https://doi.org/10.1109/tns.1976.4328539
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Process Optimization of Radiation-Hardened CMOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1975
- Determination of interface-state density and mobility ratio in silicon surface inversion layersIEEE Transactions on Electron Devices, 1970
- The silicon-silicon dioxide systemProceedings of the IEEE, 1969
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961