Optical properties of amorphous silicon and silicon dioxide
- 1 August 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (3) , 1139-1146
- https://doi.org/10.1063/1.337358
Abstract
A detailed study of the optical properties of amorphous silicon prepared by various methods is presented here. Comparisons of the various major optical parameters like the refractive index and the optical gap and related properties are then made for amorphous silicon films prepared by glow-discharge, chemical vapor deposition, and sputtered films. Experimental observations of a linear variation of the static refractive index with the Urbach tail parameter for boron-doped chemically vapor deposited films have been analyzed. Wherever relevant, spectroscopic and band-structural models like those of Penn and Wemple and DiDomenico are employed to evaluate the optical parameters of the materials. We also examine briefly the optical properties of amorphous silicon dioxide. Extrapolation of conventional models are then made to derive the relevant optical parameters of SiO2.This publication has 20 references indexed in Scilit:
- Optical properties of hydrogenated amorphous siliconJournal of Applied Physics, 1986
- Cody disorder: Absorption-edge relationships in hydrogenated amorphous siliconPhysical Review B, 1985
- Refractive index dependence on optical gap in amorphous silicon—part II. Si prepared by chemical vapour depositionInfrared Physics, 1983
- Departure of Hydrogen from a-Si:HPhysica Status Solidi (a), 1983
- Heat of crystallization and melting point of amorphous siliconApplied Physics Letters, 1983
- Refractive index dependence on optical gap in amorphous silicon—Part I. Si prepared by glow dischargeInfrared Physics, 1983
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Electronic Structure of Hydrogenated Amorphous SiliconPhysical Review Letters, 1980
- On the Penn Gap in SemiconductorsPhysica Status Solidi (b), 1979
- Temperature dependence of the energy gap in semiconductorsJournal of Physics and Chemistry of Solids, 1979