Electronic Structure of Hydrogenated Amorphous Silicon

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Abstract
Calculations of the electronic states and total energies of various bonding conformations in hydrogenated amorphous Si are presented. Various surprising results emerge, including identification of peaks in photoemission spectra as signatures of nearest-neighbor SiH configurations, a gap increasing with increasing H content while the conduction band remains essentially unchanged, and localized states in the gap arising from various defects whose energies are in sharp contrast to recently proposed simple model estimates.