Dose-rate effects on the total-dose threshold-voltage shift of power MOSFETs
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1536-1540
- https://doi.org/10.1109/23.25493
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environmentsIEEE Transactions on Nuclear Science, 1988
- Total-Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space EnvironmentsIEEE Transactions on Nuclear Science, 1987
- Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistorsApplied Physics Letters, 1986
- Super Recovery of Total Dose Damage in MOS DevicesIEEE Transactions on Nuclear Science, 1984
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980