Simulations of electron impact ionization rate in GaAs in nonuniform electric fields

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Abstract
A Monte Carlo simulation code has been developed to study the electron impact ionization in GaAs subject to nonuniform electric fields. Results are presented for the spatial evolution of the ionization rate and the average electron energy through a p+‐n junction or Schottky barrier. We show that the dead space is significantly longer than estimated by simple ballistic models. For field variations typical for p+‐n junctions or Schottky barriers, the results for the region after the dead space agree closely with steady‐state calculations. Appropriate definition of the impact ionization rate in transient problems is discussed along with the Keldysh model.