Avalanche breakdown and breakdown luminescence in p -π- n GaN diodes
- 2 April 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (7) , 691-692
- https://doi.org/10.1049/el:19980535
Abstract
The authors report the observation of electric breakdown in graded p-π-n GaN photodiodes. The breakdown is accompanied by microplasma formation. The photocurrent strongly increases at the breakdown voltages, demonstrating a potential use of these devices as avalanche photodiodes (APDs).Keywords
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