Photoluminescence and electrical properties of Sn-doped CuGaSe2 single crystals

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Abstract
Hall‐effect and photoluminescence measurements have been carried out on Sn‐doped CuGaSe2 single crystals. The doping was performed either during chemical vapor transport growth with iodine or by a diffusion step at temperatures between 200 and 400 °C. Room temperature resistivity can be varied in the range between 10−2 and 106 Ω cm. Hall‐effect data can be explained using a model containing two acceptor levels, one of which is very shallow, and a donor level. Due to doping the concentration of the first acceptor, whose activation energy is 59 meV, is decreased and the donor concentration is increased, but no n‐type conductivity was observed. The photoluminescence spectra can be explained by an acceptor level of 50 meV, two donor levels of 80 and 110 meV, respectively, and a deep state of 400 meV. VCu, VSe, VSe complexes, and Sn on cation lattice sites are suggested as origins of these states.

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