Hot-carrier light emission from silicon metal-oxide-semiconductor devices
- 26 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (26) , 2620-2622
- https://doi.org/10.1063/1.100177
Abstract
Light emitted from energetic electrons and holes near the drain region of Si field-effect transistor devices is measured spectrally resolved in the important energy range about the band gap. Using a sensitive Ge detector we examine the spectral range from 0.75 to 1.55 eV in order to identify and study the recombination of impact ionization generated electron-hole pairs. Two distinct recombination lines are observed superposed on a continuum background.Keywords
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