Electrophotographic spectroscopy of gap states in hydrogenated amorphous silicon
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 359-362
- https://doi.org/10.1016/0022-3093(85)90675-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Majority and minority carrier lifetimes in doped a-Si junctions and the energy of the dangling-bond statePhilosophical Magazine Part B, 1984
- Localized density of states in amorphous silicon determined by electrophotographyApplied Physics Letters, 1984
- Evidence of equilibrium native defect populations in amorphous chalcogenides from analyses of xerographic spectraPhilosophical Magazine Part B, 1984
- Effects of doping on transport and deep trapping in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- Electronic density of states in discharge-produced amorphous siliconApplied Physics Letters, 1979
- Investigation of the localised state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972