Power characteristics of single-mode semiconductor lasers
- 1 July 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (1) , 57-64
- https://doi.org/10.1063/1.333736
Abstract
The basic aspects of power calculations for high-gain semiconductor lasers are briefly reviewed, and a straightforward one-dimensional model is described. The relative importance of spontaneous emission, distributed losses, band-to-band absorption, and high single-pass gain are investigated in detail.This publication has 32 references indexed in Scilit:
- LONGITUDINAL PHOTON FLUX DISTRIBUTION IN LOW-Q SEMICONDUCTOR LASERSApplied Physics Letters, 1970
- Saturation Effects in High-Gain LasersJournal of Applied Physics, 1965
- Laser efficiency at high pump levelsSolid-State Electronics, 1965
- Spectral Output of Semiconductor LasersJournal of Applied Physics, 1964
- Efficiency of a P-N diode laserProceedings of the IEEE, 1964
- Nonlinear theory for laser diodesIEEE Transactions on Electron Devices, 1964
- SEMICONDUCTOR MASER OF GaAsApplied Physics Letters, 1962
- COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONSApplied Physics Letters, 1962
- STIMULATED EMISSION OF RADIATION FROM GaAs p-n JUNCTIONSApplied Physics Letters, 1962
- Coherent Light Emission From GaAs JunctionsPhysical Review Letters, 1962