LONGITUDINAL PHOTON FLUX DISTRIBUTION IN LOW-Q SEMICONDUCTOR LASERS
- 15 June 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (12) , 516-518
- https://doi.org/10.1063/1.1653088
Abstract
A nonuniform photon flux distribution over the length of the active region in semiconductor injection lasers has been found by investigating the scattered light perpendicular to the direction of the stimulated light wave. This effect is present only in low‐Q lasers.Keywords
This publication has 8 references indexed in Scilit:
- Gallium arsenide diode lasers with oblique angles between the resonator mirrors and the p-n junctionSolid-State Electronics, 1968
- Effect of Band Tails on Stimulated Emission of Light in SemiconductorsPhysical Review B, 1966
- Variation of the Gain Factor of GaAs Lasers with Photon and Current DensitiesJournal of Applied Physics, 1966
- Laser efficiency at high pump levelsSolid-State Electronics, 1965
- Effect of temperature on the stimulated emission from GaAs p-n junctionsSolid-State Electronics, 1964
- SMALL-SIGNAL AMPLIFICATION IN GaAs LASERSApplied Physics Letters, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCEApplied Physics Letters, 1963