Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl4 Reactive Ion Etching
- 1 July 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (7A) , L1213
- https://doi.org/10.1143/jjap.29.l1213
Abstract
A simplified technique has been developed for fabricating ultrafine GaAs gratings, exploiting electron-beam lithography, SiCl4 reactive ion etching (RIE) and single-layer masking. A 50-nm-thick single PMMA (polymethylmethacrylate) layer, directly exposed and not postbaked, is used as the etching mask. Using this technique, ultrafine diffraction gratings (period 60, 80, 120 nm) with good profile have been successfully fabricated on GaAs substrates. It is expected that the present technique will be applicable to the fabrication of finer structures such as quantum wires and dots.Keywords
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