Formation of a step-free InAs quantum well selectively grown on a GaAs (111)B substrate
- 1 October 1997
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (10) , 1214-1220
- https://doi.org/10.1007/s11664-997-0022-y
Abstract
No abstract availableKeywords
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