Electrode parasitic capacitances in self-aligned and deep-recessed GaAs MESFETs
- 1 October 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (10) , 1471-1476
- https://doi.org/10.1016/0038-1101(88)90017-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Process-Based Three-Dimensional Capacitance Simulation -- TRICEPSIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1986
- A capacitance model for GaAs MESFET'sIEEE Transactions on Electron Devices, 1985
- Semiconductor device simulationIEEE Transactions on Electron Devices, 1983
- Determination of the Electrode Capacitance Matrix for GaAs FET'sIEEE Transactions on Microwave Theory and Techniques, 1980
- A Simple Analysis of Thick Microstrip on Anisotropic Substrates (Technical Notes)IEEE Transactions on Microwave Theory and Techniques, 1978
- Microwave Field-Effect Transistors - 1976IEEE Transactions on Microwave Theory and Techniques, 1976
- Capacitance models for integrated circuit metallization wiresIEEE Journal of Solid-State Circuits, 1975
- Computation of Lumped Microstrip Capacities by Matrix Methods - Rectangular Sections and End Effect (Correspondence)IEEE Transactions on Microwave Theory and Techniques, 1971