A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

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Abstract
The ultrafast characteristics of crystalline‐silicon metal‐semiconductor‐metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro‐optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light‐intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed‐limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths.