Flip-chip mounted 26 V GalnP/GaAs power UBTs
- 19 April 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
GaInP/GaAs HBTs suitable for high-voltage operation (/spl ges/ 26 V) were developed. The HBTs show high current driving capabilities delivering at least 3 A of peak DC current. Furthermore, high power levels beyond 10 W corresponding to power densities of up to 360 kW/cm/sup 2/ were achieved, at an output impedance in the 10 to 15 ohms range. These results were reached only after low thermal resistance mounting using a proprietary flip-chip soldering process. The mounted HBT power cells are available in package. They deliver up to 14 W of output power at 2 GHz and a bias voltage of 26 V, with high PAE of up to 71 % and high gain of 14 dB. Thus, these power cells are very promising for power applications with extended bandwidth requirements, such as multi-band base-station amplifiers.Keywords
This publication has 3 references indexed in Scilit:
- Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressingMicroelectronics Reliability, 2001
- High reliability InGaP/GaAs HBTIEEE Electron Device Letters, 1998
- 28-V low thermal-impedance HBT with 20-W CW output powerIEEE Transactions on Microwave Theory and Techniques, 1997