28-V low thermal-impedance HBT with 20-W CW output power
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 45 (12) , 2224-2228
- https://doi.org/10.1109/22.643820
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed basePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Single-chip 30 W CW AlGaAs/GaAs heterojunction bipolar transistor at 3 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Model for degradation of GaAs/AlGaAs HBTs under temperature and current stressPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low thermal impedance MMIC technologyIEEE Microwave and Guided Wave Letters, 1997
- The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1996
- Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densitiesIEEE Transactions on Electron Devices, 1993
- Self-consistent particle simulation for (AlGa)As/GaAs HBTs with improved base-collector structuresIEEE Transactions on Electron Devices, 1989