Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures
- 15 July 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (2) , 1029-1032
- https://doi.org/10.1063/1.357846
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Molecular beam epitaxial GaAs grown at low temperaturesThin Solid Films, 1993
- Annealing of low-temperature GaAs studied using a variable energy positron beamApplied Physics Letters, 1993
- Annealing dynamics of molecular-beam epitaxial GaAs grown at 200 °CJournal of Applied Physics, 1993
- Defects in low-temperature-grown GaAs annealed at 800 °CApplied Physics Letters, 1992
- Sharp-line photoluminescence of GaAs grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1992
- Photoquenching of hopping conduction in low-temperature-grown molecular-beam-epitaxial GaAsApplied Physics Letters, 1992
- Arsenic antisite-related defects in low-temperature MBE grown GaAsSemiconductor Science and Technology, 1992
- Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layersApplied Physics Letters, 1992
- Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defectPhysical Review B, 1990
- Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperaturesJournal of Vacuum Science & Technology B, 1989