Defects in low-temperature-grown GaAs annealed at 800 °C
- 5 October 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (14) , 1679-1681
- https://doi.org/10.1063/1.108449
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Nonlinear interaction of photons and phonons in electron-positron plasmasPhysical Review A, 1990
- Investigation of low growth temperature AlGaAs and GaAs using metal–insulator–semiconductor diagnostic structuresJournal of Vacuum Science & Technology B, 1990
- Anomalies in MODFET's with a low-temperature bufferIEEE Transactions on Electron Devices, 1990
- Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperaturesJournal of Vacuum Science & Technology B, 1989
- Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1989
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAsJournal of Luminescence, 1975