Quantitative SIMS analysis of hydrogenated amorphous silicon using superimposed deuterium implant standards
- 15 December 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 218 (1-3) , 299-302
- https://doi.org/10.1016/0167-5087(83)90994-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Isotope fractionation in secondary ion mass spectrometryJournal of Applied Physics, 1982
- Quantitative hydrogen depth-profiling using SIMSApplications of Surface Science, 1981
- Ion implantation for in-situ quantitative ion microprobe analysisAnalytical Chemistry, 1980
- Absolute coverage measurement of adsorbed CO and D2 on platinumNuclear Instruments and Methods, 1980
- A note on the 3He + D nuclear-reaction cross sectionNuclear Instruments and Methods, 1980
- Quantitative ion implantation: The practiceInternational Journal of Mass Spectrometry and Ion Physics, 1979
- Quantitative ion implantation: Theoretical aspectsInternational Journal of Mass Spectrometry and Ion Physics, 1979
- Current Problems in Low Energy Ion Beam Materials Analysis with SIMSIEEE Transactions on Nuclear Science, 1979
- Profiling hydrogen in materials using ion beamsNuclear Instruments and Methods, 1978