Influence of intralayer quantum-well states on the giant magnetoresistance in magnetic multilayers

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Abstract
A model which can account for the experimentally observed variations of the giant magnetoresistance in thin magnetic multilayers with mean free path, interface roughness, magnetic layer, and normal layer thickness has been developed. The model requires the existence of quantum-well states wihin individual layers or groups of layers, depending on the magnetic state of the film. The calculated results are obtained by the application of quantum size effect transport theory to these individual layers.