Electro-Luminescence from Ultra-Thin Silicon
- 1 July 2006
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 45 (7L) , L679-L682
- https://doi.org/10.1143/jjap.45.l679
Abstract
Ultra-thin single crystal silicon with the (100) surface formed by the local-oxidation-of-silicon (LOCOS) on a silicon-on-insulator (SOI) substrate becomes a quasi-direct band-gap semiconductor due to the quantum mechanical confinement effect. The device is a simple pit diode in a planar structure. Electro-luminescence (EL) has been observed by the lateral carrier injections into the two-dimensional quantum well.Keywords
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