Silicon-based quantum wells
- 1 July 1993
- journal article
- Published by Springer Nature in Nature
- Vol. 364 (6432) , 19
- https://doi.org/10.1038/364019a0
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Observation of quantum confinement effects in strained Si0.84Ge0.16/Si quantum wells at room temperatureApplied Physics Letters, 1993
- Resonant Tunnelling and Superlattice Devices: Physics and CircuitsPublished by Springer Nature ,1990
- Growth and characterization of epitaxial silicon on heteroepitaxial CaF2/Si(111) structuresJournal of Applied Physics, 1988
- Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance deviceJournal of Applied Physics, 1985
- Strained-layer superlattices from lattice mismatched materialsJournal of Applied Physics, 1982
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Tunneling in a finite superlatticeApplied Physics Letters, 1973