Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxy
- 31 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4) , 599-604
- https://doi.org/10.1016/s0022-0248(00)00785-5
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Ripening suppression and large photoluminescence blueshift in aligned InGaAs quantum dots on a vicinal (100) GaAs substrateJournal of Applied Physics, 1999
- Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask materialApplied Physics Letters, 1998
- Mode assignment of excited states in self-assembled InAs/GaAs quantum dotsPhysical Review B, 1998
- Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substratesApplied Physics Letters, 1998
- Anomalous excitation intensity dependence of photoluminescence from InAs self-assembled quantum dotsSolid-State Electronics, 1998
- InAs quantum dot formation on GaAs pyramids by selective area MOVPEPhysica E: Low-dimensional Systems and Nanostructures, 1998
- Laser stimulated selective area growth of quantum dotsApplied Physics Letters, 1998
- Excited states and energy relaxation in stacked InAs/GaAs quantum dotsPhysical Review B, 1998
- Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substratesApplied Physics Letters, 1998
- Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor depositionApplied Physics Letters, 1997