Electronic Conduction in Mg Doped In2O3 Single Crystals

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Abstract
Mg doped In2O3 single crystals are prepared by flux method and their electronic conduction is investigated. Since Mg acts as an acceptor impurity, electrical resistivity of the In2O3 crystal increases and electron concentration decreases by doping with Mg. The crystals are n-type and the lowest value of electron concentration is about 2×1016/cm3. The electron concentration and electron mobility of the crystals are found to be almost independent of the temperature. The experimental results are explained by assuming that the acceptors, Mg ions which replace In ions, are almost completely compensated by the native donors, the oxygen vacancies, in In2O3 crystals.

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