Fractional quantum Hall effect at filling factors up to ν=3

Publisher Website
Google Scholar
Abstract
Addition gaps in the energy spectrum of a two-dimensional electron gas in a strong magnetic field due to electron-electron interaction seem to be responsible for the fractional quantum Hall effect (FQHE). The authors have analysed the structures attributed to the FQHE in the components rho xx, rho xy and sigma xx of the resistivity and conductivity tensor as a function of the magnetic field at Landau filling factors up to nu =3. For the first time the values for the energy gaps at nu =4/3 and nu =5/3 are determined and resistivity values for the corresponding Hall plateaux are reported.