g-Factor enhancement in the 2D electron gas in GaAs/AlGaAs heterojunctions
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3) , 295-300
- https://doi.org/10.1016/0039-6028(82)90604-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Explanation of quantized-Hall-resistance plateaus in heterojunction inversion layersPhysical Review B, 1981
- Resistance standard using quantization of the Hall resistance of GaAs-AlxGa1−xAs heterostructuresApplied Physics Letters, 1981
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980
- Two-dimensional electrical transport in GaAs-multilayers at high magnetic fieldsPhysical Review B, 1980
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si III. Enhancement of Splittings by Many-Body EffectsJournal of the Physics Society Japan, 1977
- Theory of Oscillatory g Factor in an MOS Inversion Layer under Strong Magnetic FieldsJournal of the Physics Society Japan, 1974
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968
- Electron spin resonance in n-type GaAsPhysics Letters, 1963