Two-dimensional electrical transport in GaAs-AlxGa1xAsmultilayers at high magnetic fields

Abstract
We have studied the magnetotransport properties of two-dimensional electrons in thin GaAs-AlxGa1xAs multilayers with fields up to 210 kG from 4.2 to 2.4 K. We observed that ρxx decreases with decreasing T in the high-field limit ν=2πnl021, but ρxy shows no such changes. We show that this result cannot be explained by models based on independent electrons and suggest as possible explanations the formation of a highly correlated state, such as a charge-density wave or Wigner solid previously suggested for the Si inversion layer, and the enhancement of g factor at ν1.