Growth and properties of (Ga,Mn)As films with high Mn concentration
- 1 June 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (11) , 7024-7026
- https://doi.org/10.1063/1.1357841
Abstract
(Ga, Mn)As films with high nominal Mn concentration (00.3. X-ray diffraction shows the formation of MnAs together with the growth of (Ga, Mn)As. The lattice constant of the layers suggests that (Ga, Mn)As with high Mn composition as high as 17% can be grown by LT-MBE.This publication has 7 references indexed in Scilit:
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