Transport properties and origin of ferromagnetism in (Ga,Mn)As
- 15 January 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (4) , R2037-R2040
- https://doi.org/10.1103/physrevb.57.r2037
Abstract
Magnetotransport properties of -type ferromagnetic (Ga,Mn)As, a diluted magnetic semiconductor based on III-V semiconductors, are measured and the exchange between holes and Mn spins is determined. The ferromagnetic transition temperatures calculated based on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction using the exchange reproduce remarkably well the observed ferromagnetic transition temperatures, demonstrating that ferromagnetism of (Ga,Mn)As has its origin in the RKKY interaction mediated by holes.
Keywords
This publication has 17 references indexed in Scilit:
- Observation of a Ferromagnetic Transition Induced by Two-Dimensional Hole Gas in Modulation-Doped CdMnTe Quantum WellsPhysical Review Letters, 1997
- Spin Transport and Localization in a Magnetic Two-Dimensional Electron GasPhysical Review Letters, 1997
- (Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1997
- Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductorsPhysical Review Letters, 1992
- On compensation and conductivity models for molecular-beam-epitaxial GaAs grown at low temperatureJournal of Applied Physics, 1991
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989
- Carrier-concentration–induced ferromagnetism in PbSnMnTePhysical Review Letters, 1986
- LOW-TEMPERATURE TRANSITION METAL-SEMICONDUCTOR IN CdCr2Se4 SINGLE CRYSTALS DOPED WITH INDIUM AND GALLIUMLe Journal de Physique Colloques, 1980
- Evidence of Band Conduction and Critical Scattering in Dilute Eu-Chalcogenide AlloysPhysical Review Letters, 1968
- Polarisation de charge (ou de spin) au voisinage d'une impureté dans un alliageJournal de Physique et le Radium, 1962