Electron paramagnetic resonance and capacitance-voltage studies of ultraviolet irradiated Si-SiO2 interfaces
- 1 July 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (1) , 366-368
- https://doi.org/10.1063/1.347146
Abstract
Electron paramagnetic resonance and capacitance-voltage studies of hydrogen passivated Si-SiO2 interfaces indicate that UV irradiation of the interface does not result in the creation of new Pb centers or interface states providing no photocurrent is allowed to pass through the oxide. This is in contrast to the generally known fact that UV irradiation with photoinjection does form interface states.This publication has 14 references indexed in Scilit:
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