Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate
- 15 April 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8) , 709-711
- https://doi.org/10.1063/1.93243
Abstract
We observe the generation of interface states in the Si-SiO2 system when electrons are internally photoinjected from an Al field plate and are swept through the oxide by a moderate electric field. Interface states appear immediately at 90 K. The rate of interface state generation caused by photoinjected electrons depends on the oxide thickness and the magnitude of the bias field. The generated interface state density is found to increase as Nss = AQs, where Q is the injected charge and s is generally in the range 0.5–0.7. The generation does not saturate after passage of a total charge of 0.35 C/cm2.Keywords
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