Hole Transport in Glow-Discharged a-Si:H Films Compensated with Boron
- 1 January 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (1A) , L4
- https://doi.org/10.1143/jjap.25.l4
Abstract
In lightly boron-doped a-Si: H films electrons become highly dispersive in time-of-flight measurement while holes clearly show a non-dispersive transport, in drastic contrast with observations in undoped or lightly phosphorus-doped films. Mechanisms responsible for the drastic change in the electronic transport characteristic between undoped or phosphorus-doped slightly n-type and lightly boron-doped films are briefly discussed.Keywords
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