Infrared difference frequency generation with quasi-phase-matchedGaAs
- 6 August 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (16) , 1609-1611
- https://doi.org/10.1049/el:19981143
Abstract
The authors report infrared difference-frequency generation in a high transmission diffusion-bonded GaAs stack. Using an LiNbO3 optical parametric oscillator as the pump source, a conversion efficiency of 3.4 × 10–4, output energy of 2 µJ and 180 W peak power were obtained at 11.35 µm.Keywords
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