Optically detected magnetic resonance of deep centers in molecular beam epitaxy ZnSe:N
- 25 October 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (17) , 2411-2413
- https://doi.org/10.1063/1.110491
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nmApplied Physics Letters, 1993
- ZnSe-ZnCdSe quantum confined Stark effect modulatorsApplied Physics Letters, 1993
- II–VI quantum-confined Stark effect modulatorsPhysica B: Condensed Matter, 1993
- ZnSe-based laser diodes and p-type doping of ZnSePhysica B: Condensed Matter, 1993
- Compensation processes in nitrogen doped ZnSeApplied Physics Letters, 1992
- Heavily doped p-ZnSe:N grown by molecular beam epitaxyApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growthJournal of Crystal Growth, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990
- Photoluminescence properties of nitrogen-doped ZnSe grown by molecular beam epitaxyJournal of Applied Physics, 1985