Oxide-confined resonant cavity red light-emittingdiode grown by solid source molecular beam epitaxy
- 6 November 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (23) , 1989-1990
- https://doi.org/10.1049/el:19971260
Abstract
The authors report a 600 nm range resonant cavity light emitting diode, grown by solid source molecular beam epitaxy. The device consisted of a 1λ thick AlGaInP active region surrounded by AlGaAs-based distributed Bragg reflectors. The current aperture of the device was formed by lateral selective wet thermal oxidation. A record continuous-wave output power of 1.1 mW, with 5.3 nm linewidth and a peak external quantum efficiency of 2.0%, was attained from the device with an 80 µm exit window. The spectrum remained almost unaffected by temperature variations.Keywords
This publication has 6 references indexed in Scilit:
- Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxyApplied Physics Letters, 1997
- High efficiency AlGaInP-based 660–680 nm vertical-cavitysurfaceemitting lasersElectronics Letters, 1995
- AlGaInP visible resonant cavity light-emitting diodesIEEE Photonics Technology Letters, 1993
- Electrically injected visible (639–661 nm) vertical cavity surface emitting lasersElectronics Letters, 1993
- Visible (660 nm) resonant cavity light-emitting diodesElectronics Letters, 1993
- Resonant cavity light-emitting diodeApplied Physics Letters, 1992